2SB1430 数据表(PDF) - NEC

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2SB1430 数据表 (PDF) - NEC

2SB1430 Datasheet PDF - NEC


部件名	2SB1430

下载	2SB1430 下载

文件大小	115.8 Kbytes

页	6 Pages

制造商	NEC [NEC]

网页	http://www.nec.com/

标志

功能描述	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

2SB1430 Datasheet (PDF)

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2SB1430 Datasheet PDF - NEC


部件名	2SB1430

下载	2SB1430 Click to download

文件大小	115.8 Kbytes

页	6 Pages

制造商	NEC [NEC]

网页	http://www.nec.com/

标志

功能描述	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

2SB1430 数据表 (HTML) - NEC

2SB1430 Datasheet HTML 1Page - NEC

2SB1430 Datasheet HTML 2Page - NEC

2SB1430 Datasheet HTML 3Page - NEC

2SB1430 Datasheet HTML 4Page - NEC

2SB1430 Datasheet HTML 5Page - NEC

2SB1430 Datasheet HTML 6Page - NEC

2SB1430 产品详情

The 2SB1430 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment.
In addition, this transistor features a small resin-molded insulation type package, thus contributing to high-density mounting and mounting cost reduction.

FEATURES
• High hFE due to Darlington connection:
hFE ≥ 2,000 (VCE = 2 V, IC = 2 A)
• Mold package that does not require an insulating board or insulation bushing

类似零件编号 - 2SB1430

制造商	部件名	数据表	功能描述
Savantic, Inc.	2SB1430	218Kb / 3P	Silicon PNP Power Transistors
Inchange Semiconductor ...	2SB1430	250Kb / 2P	isc Silicon PNP Darlington Power Transistor
Savantic, Inc.	2SB1430	219Kb / 3P	Silicon PNP Power Transistors
New Jersey Semi-Conduct...	2SB1430	128Kb / 2P	Silicon PNP Darlington Power Transistor
Renesas Technology Corp	2SB1430	267Kb / 8P	SILICON POWER TRANSISTOR 2002

类似说明 - 2SB1430

制造商	部件名	数据表	功能描述
NEC	2SB601	110Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SD2217	100Kb / 4P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SB1431	132Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SB1432	106Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SB1578	129Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
	2SD560	90Kb / 6P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SD2165	118Kb / 5P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SD1843	76Kb / 4P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Renesas Technology Corp	2SB1432	229Kb / 8P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Renesas Technology Corp	2SB1431	257Kb / 8P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

关于 NEC

NEC Corporation是一家日本跨国信息技术和电子公司。该公司成立于1899年，总部位于日本东京。 NEC提供广泛的产品和服务，包括信息技术，电信和电子产品。它的投资组合包括计算机硬件，软件和服务，网络解决方案，显示解决方案以及企业服务器和存储解决方案。

NEC以其在信息技术领域的专业知识及其提供创新和高质量产品和服务的能力而闻名。该公司在世界各地拥有运营和设施，并在亚太地区拥有强大的业务。 NEC与客户紧密合作，提供满足其特定要求和需求的自定义解决方案。

除了其核心业务外，NEC还活跃于研发领域，并参与了与高级技术有关的各种项目，例如人工智能，5G网络和物联网（IoT）。 NEC致力于提供可持续的解决方案，以支持社会发展并改善世界各地人们的生活质量。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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