GTRA262802FC-V2-R2 数据表(PDF) - Cree, Inc

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GTRA262802FC-V2-R2 数据表 (PDF) - Cree, Inc

GTRA262802FC-V2-R2 Datasheet PDF - Cree, Inc


部件名	GTRA262802FC-V2-R2

下载	GTRA262802FC-V2-R2 下载

文件大小	497.05 Kbytes

页	9 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz

GTRA262802FC-V2-R2 Datasheet (PDF)

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GTRA262802FC-V2-R2 Datasheet PDF - Cree, Inc


部件名	GTRA262802FC-V2-R2

下载	GTRA262802FC-V2-R2 Click to download

文件大小	497.05 Kbytes

页	9 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz

GTRA262802FC-V2-R2 数据表 (HTML) - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 1Page - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 2Page - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 3Page - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 4Page - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 5Page - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 6Page - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 7Page - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 8Page - Cree, Inc

GTRA262802FC-V2-R2 Datasheet HTML 9Page - Cree, Inc

类似零件编号 - GTRA262802FC-V2-R2

制造商	部件名	数据表	功能描述
WOLFSPEED, INC.	GTRA262802FC-V2-R2	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27

类似说明 - GTRA262802FC-V2-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTRA263902FC	531Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Rev. 04.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27

关于 Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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