PXFE211507FC-V1-R0 数据表(PDF) - Cree, Inc

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PXFE211507FC-V1-R0 数据表 (PDF) - Cree, Inc

PXFE211507FC-V1-R0 Datasheet PDF - Cree, Inc


部件名	PXFE211507FC-V1-R0

下载	PXFE211507FC-V1-R0 下载

文件大小	587.63 Kbytes

页	8 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz

PXFE211507FC-V1-R0 Datasheet (PDF)

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PXFE211507FC-V1-R0 Datasheet PDF - Cree, Inc


部件名	PXFE211507FC-V1-R0

下载	PXFE211507FC-V1-R0 Click to download

文件大小	587.63 Kbytes

页	8 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz

PXFE211507FC-V1-R0 数据表 (HTML) - Cree, Inc

PXFE211507FC-V1-R0 Datasheet HTML 1Page - Cree, Inc

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PXFE211507FC-V1-R0 Datasheet HTML 3Page - Cree, Inc

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PXFE211507FC-V1-R0 Datasheet HTML 5Page - Cree, Inc

PXFE211507FC-V1-R0 Datasheet HTML 6Page - Cree, Inc

PXFE211507FC-V1-R0 Datasheet HTML 7Page - Cree, Inc

PXFE211507FC-V1-R0 Datasheet HTML 8Page - Cree, Inc

类似零件编号 - PXFE211507FC-V1-R0

制造商	部件名	数据表	功能描述
WOLFSPEED, INC.	PXFE211507FC-V1-R0	763Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-28

类似说明 - PXFE211507FC-V1-R0

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB213208FV	221Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
	PTAC210802FC	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PXAD214218FV	391Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz Rev. 02.2, 2017-03-30
Cree, Inc	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
	PTFB210801FA	636Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
	PTFB213208FV	659Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
WOLFSPEED, INC.	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-23
WOLFSPEED, INC.	PXFE211507FC	763Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-28

关于 Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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