Darlington Silicon Power Transistors

Designed for general−purpose amplifier and low speed switching applications.

• High DC Current Gain −

   hFE = 3500 (Typ) @ IC = 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 200 mAdc

   VCEO(sus) = 60 Vdc (Min) − 2N6667

                      = 80 Vdc (Min) − 2N6668

• Low Collector−Emitter Saturation Voltage −

   VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• TO−220AB Compact Package

• Complementary to 2N6387, 2N6388

• These Devices are Pb−Free and are RoHS Compliant*