| 制造商 | 部件名 | 数据表 | 功能描述 |
 Samsung semiconductor |
KM44C4003C
|
376Kb / 20P |
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
|
 List of Unclassifed Man... |
MT4C4256E
|
404Kb / 2P |
1 MEG PAGE MODE DRAM
|
 Micron Technology |
MT4C4003J
|
796Kb / 12P |
1 MEG x 4 DRAM
|
|
MT4C4004J
|
887Kb / 12P |
1 MEG x 4 DRAM 5V, QUAD CAS PARITY, FAST PAGE MODE
|
|
MT4C4005
|
859Kb / 12P |
1 MEG x 4 DRAM FAST PAGE MODE WRITE-PER-BIT
|
|
MT4C4007J
|
992Kb / 14P |
1 MEG x 4 DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH
|
 Austin Semiconductor |
AS4LC4M4883C
|
191Kb / 20P |
4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
|
|
MT4C1004J
|
121Kb / 14P |
4 MEG x 1 DRAM FAST PAGE MODE
|
|
MT4C4001J
|
251Kb / 20P |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
|
MT4C4001J
|
1Mb / 21P |
1 MEG x 4 DRAM Fast Page Mode DRAM
|