RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET

Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA,
   Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
   MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
      Power Gain — 14 dB
      Drain Efficiency — 26%
      IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth
      ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.