Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate

This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts.

• Built–In Free Wheeling Diodes
• Built–In Gate Protection Zener Diode
• Industry Standard Package (TO92 — 1.0 Watt)
• High Speed Eoff: Typical 6.5μJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/μs
• Robust High Voltage Termination
• Robust Turn–Off SOA