| 制造商 | 部件名 | 数据表 | 功能描述 |
 Leshan Radio Company |
LN7308DT1WG
|
373Kb / 3P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNA7350DT1WG
|
1Mb / 5P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNB8308DT0AG
|
472Kb / 6P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LP7337DT1WG
|
959Kb / 7P |
P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LPB8337DT0AG
|
626Kb / 6P |
P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LN3432LT1G
|
875Kb / 5P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LP4407T1G
|
441Kb / 5P |
P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LP4433T1G
|
567Kb / 5P |
P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
|
|
LP4435T1G
|
591Kb / 5P |
P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
|
|
S-LN3432LT1G
|
880Kb / 5P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|