| 制造商 | 部件名 | 数据表 | 功能描述 |
 Advanced Power Electron... |
AP9T15GH,J
|
103Kb / 4P |
Low Gate Charge, Capable of 2.5V Gate Drive
|
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AP9T16GH,J
|
268Kb / 6P |
Low Gate Charge, Capable of 2.5V gate drive
|
|
AP9T18GH,J
|
218Kb / 6P |
Low Gate Charge, Capable of 2.5V gate drive
|
|
AP9T19GJ
|
80Kb / 4P |
Low Gate Charge, Capable of 2.5V gate drive
|
|
AP9T15GHJ-HF
|
103Kb / 4P |
Low Gate Charge
|
|
AP9T16GJ
|
268Kb / 6P |
Low Gate Charge
|
|
AP9T18GH
|
218Kb / 6P |
Low Gate Charge
|
 STMicroelectronics |
STB85NS04Z
|
397Kb / 15P |
Low capacitance and gate charge
25-Sep-2006 |
 First Silicon Co., Ltd |
FTK2306
|
408Kb / 4P |
low gate charge and operation with gate low gate charge and operation with gate
|
 Guangdong Youtai Semico... |
15N10
|
660Kb / 5P |
The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
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