| 制造商 | 部件名 | 数据表 | 功能描述 |
STMicroelectronics |
STM32F415ZGT6
|
5Mb / 186P |
ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash
04-Jun-2013 |
Renesas Technology Corp |
RA2L1
|
1Mb / 110P |
Ultra low power 48 MHz Arm짰 Cortex-M23 core, up to 256-KB code flash memory
|
|
RA4M1
|
1Mb / 130P |
High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
|
|
RA6T1
|
990Kb / 69P |
Leading performance 120-MHz Arm짰 Cortex짰-M4 core, up to 512 KB of code flash memory, 64-KB SRAM, security and safety features, and advanced analog.
|
|
RA4E1
|
1Mb / 81P |
Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation,8 KB
Feb 4, 2022 |
|
RA4M2
|
1Mb / 92P |
Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
Jan 27, 2021 |
|
RA6E1
|
1Mb / 93P |
High-performance 200 MHz Arm Cortex-M33 core up to 1 MB code flash memory with Dual-bank, background and SWAP operation, KB Data flash memory, and 256 KB SRAM with Parity.
Feb 4, 2022 |
|
RA6M5
|
1Mb / 118P |
High-performance 200 MHz Arm Cortex-M33 core, up to 2 MB code flash memory with Dual-bank, background and SWAP operation, 8 KB Data flash memory, and 512 KB SRAM with Parity/ECC.
Mar 31, 2021 |
NXP Semiconductors |
KS22P100M120SF0
|
1Mb / 118P |
KS22/KS20 Microcontroller 120 MHz ARM® Cortex®-M4, with up to 256 KB Flash
Rev. 3.1, 06/2022 |
Renesas Technology Corp |
S5D5
|
1Mb / 100P |
Leading performance 120 MHz Arm® Cortex®-M4 core, up to 1-MB code flash memory, 384-KB SRAM
Rev.1.30 Aug 2019 |
Chinese ▼ 
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
