| 制造商 | 部件名 | 数据表 | 功能描述 |
 SHENZHEN DOINGTER SEMIC... |
MTA015C02Q8
|
2Mb / 9P |
N-Channel and P-Channel MOSFET uses advanced trench technology
|
|
MTD120C10KQ8
|
2Mb / 7P |
N-Channel and P-Channel MOSFET uses advanced trench technology
|
|
RU30L15H
|
2Mb / 7P |
P-Channel MOSFET uses advanced trench technology
|
|
SM2221CSQG
|
1Mb / 7P |
N-Channel and P-Channel MOSFET uses advanced trench technology
|
|
SM4310PSK
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
SM4403PSK
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
SPP4435B
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
SSG4841P
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
STP413D
|
1,019Kb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
STP4435A
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|