Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(<35pF) ● Low RDS (on) ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery chargers ● Switched-mode and resonant-mode power supplies ● DC choppers ● AC motor control Advantages ● Easy assembly: no screws or isolation foils required ● Space savings ● High power density ● Low collector capacitance to ground (low EMI)
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