HiPerFET™ MOSFET ISOPLUS220™
Electrically Isolated Back Surface

N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOS™ Family

Features
• Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• Low drain to tab capacitance(<35pF)
• Low RDS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier

Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control

Advantages
• Easy assembly: no screws or isolation foils required
• Space savings
• High power density
• Low collector capacitance to ground (low EMI)