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CY7C1311AV18 数据表 (PDF) - Cypress Semiconductor

CY7C1311AV18 Datasheet PDF - Cypress Semiconductor
部件名 CY7C1311AV18
下载  CY7C1311AV18 下载
文件大小   327.27 Kbytes
  22 Pages
制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor
功能描述 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

CY7C1311AV18 Datasheet (PDF)

Go To PDF Page 下载 数据表
CY7C1311AV18 Datasheet PDF - Cypress Semiconductor

部件名 CY7C1311AV18
下载  CY7C1311AV18 Click to download

文件大小   327.27 Kbytes
  22 Pages
制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor
功能描述 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

CY7C1311AV18 数据表 (HTML) - Cypress Semiconductor


CY7C1311AV18 产品详情

Functional Description
The CY7C1311AV18/CY7C1313AV18/CY7C1315AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for Read and Write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II Read and Write ports are completely independent of one another. In order to maximize data throughput, both Read and Write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 8-bit words (CY7C1311AV18) or 18-bit words (CY7C1313AV18) or 36-bit words (CY7C1315AV18) that burst sequentially into or out of the device. Since data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”.
Depth expansion is accomplished with Port Selects for each port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Features
• Separate Independent Read and Write Data Ports
   — Supports concurrent transactions
• 250-MHz Clock for High Bandwidth
• 4-Word Burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz
• Two input clocks (K and K) for precise DDR timing
   — SRAM uses rising edges only
• Two output clocks (C and C) accounts for clock skew and flight time mismatching
• Echo clocks (CQ and CQ) simplify data capture in high speed systems
• Single multiplexed address input bus latches address inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• Available in ×8, ×18, and ×36 configurations
• Full data coherancy providing most current data
• Core Vdd=1.8(+/-0.1V);I/O Vddq=1.4V to Vdd)
• 13 × 15 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball (11 × 15 matrix)
• Variable drive HSTL output buffers
• JTAG 1149.1 Compatible test access port
• Delay Lock Loop (DLL) for accurate data placement




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类似说明 - CY7C1311AV18

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关于 Cypress Semiconductor


赛普拉斯半导体是一家美国公司,专门从事高性能数字和模拟集成电路(ICS)的设计和制造。
该公司成立于1982年,总部位于美国加利福尼亚州圣何塞。
赛普拉斯(Cypress)提供了广泛的产品,包括微控制器,内存产品,无线连接解决方​​案以及其他数字和模拟IC。
该公司的产品用于各种应用,例如消费电子,汽车系统,工业系统等。
赛普拉斯以其在嵌入式系统领域的混合信号和可编程系统,高质量产品和创新方面的专业知识而闻名。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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