GENERAL DESCRIPTION
The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high
electron mobility transistor (pHEMT), monolithic microwave integrated
circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W)
distributed power amplifier with an integrated temperature compensated
on-chip power detector that operates from 20 GHz to 54
GHz. The amplifier provides 17.5 dB of small signal gain, an output
power for 1 dB compression (P1dB) of 30 dBm with an excellent
IP3 of 37 dBm typical from 22 GHz to 40 GHz. The ADPA7008
is ideal for linear applications such as electronic countermeasure
and instrumentation applications requiring 31 dBm of efficient PSAT.
The ADPA7008 requires 1500 mA from a 5 V supply voltage (VDD).
The RF input and outputs are internally matched and dc blocked for
ease of integration into higher level assemblies. The ADPA7008 is
housed in a 7 mm × 7 mm, ceramic leadless package with heat sink
[LCC_HS] that exhibits low thermal resistance and is compatible
with surface-mount manufacturing techniques.

FEATURES
► Output P1dB: 30 dBm typical at 22 GHz to 40 GHz
► PSAT: 31 dBm typical at 22 GHz to 40 GHz
► Gain: 17.5 dB typical at 22 GHz to 40 GHz
► Input return loss: 12 dB typical at 22 GHz to 40 GHz
► Output return loss: 9.5 dB typical at 22 GHz to 40 GHz
► Output IP3: 37 dBm typical at 22 GHz to 40 GHz
► Supply voltage: 5 V typical at 1500 mA
► 50 Ω matched input and output
► 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with heat sink [LCC_HS]
► Integrated power detector

APPLICATIONS
► Aerospace and defense
► Test instrumentation
► Communications