FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912

BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION
VS-HFA08TB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.