The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of
the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2.
Resulting from improved switching performance and excellent thermal
behavior, 650 V CooMOS™ CFD7 offers highest efficiency in resonant
switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As
part of Infineon’s fast body diode portfolio, this new product series blends
all advantages of a fast switching technology together with superior hard
commutation robustness. The CoolMOS™ CFD7 technology meets
highest efficiency and reliability standards and furthermore supports high
power density solutions.
Features
• Ultra-fast body diode
• 650V break down voltage
• Best-in-class RDS(on)
• Reduced switching losses
• Low RDS(on) dependency over temperature
Benefits
• Excellent hard commutation ruggedness
• Extra safety margin for designs with increased bus voltage
• Enabling increased power density solutions
• Outstanding light load efficiency in industrial SMPS applications
• Improved full load efficiency in industrial SMPS applications
• Price competitiveness over previous CoolMOS™ families
Potential applications
Suitable for Soft Switching topologies
Optimized for phase-shift full-bridge (ZVS), LLC Applications – Server,
Telecom, EV Charging, Solar
Product validation
Fully qualified according to JEDEC for Industrial Applications
Please note: The source and sense source pins are not exchangeable.
Their exchange might lead to malfunction. For paralleling 4pin MOSFET
devices the placement of the gate resistor is generally recommended to be
on the Driver Source instead of the Gate.