Description
The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high-density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.

Features
⚫ N-Channel
20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A, RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A, RDS(ON)=800mΩ@VGS=1.8V
⚫ P-Channel
-20V/0.45A, RDS(ON)= 520mΩ @VGS=-4.5V
-20V/0.35A, RDS(ON)= 700mΩ @VGS=-2.5V
-20V/0.25A, RDS(ON)= 1500mΩ @VGS=-1.8V
⚫ Super high-density cell design for extremely low RDS (ON)
⚫ Exceptional on-resistance and maximum DC current capability

Application
⚫ Power Management in Note book
⚫ Portable Equipment
⚫ Battery Powered System
⚫ DC/DC Converter
⚫ Load Switch
⚫ DSC
⚫ LCD Display inverter