GENERAL DESCRIPTION
ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are
matched and adjusted (e-trimmed) at the factory resulting in quad/dual
MOSFETs that are highly matched in threshold voltages and other electrical
characteristics. For a given input voltage, the threshold voltage of a
MOSFET device determines its drain on-current, resulting in an onresistance
characteristic that can be precisely preset and then controlled by
the input voltage very accurately.
Using an ALD1108E/ALD1110E is simple and straight forward. The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. Since
these devices are on the same monolithic chip, they also exhibit excellent
tempco matching characteristics.
These MOSFET devices have very low input currents, and as a result a very
high input impedance (>1012 Ohm). The gate voltage from a control source
can drive many MOSFET inputs with practically no loading effects. Used in
precision current mirror or current multiplier applications, they can be used
to provide a current source over a 100nA to 3mA range, and with either a
positive, negative or zero tempco.

APPLICATIONS
• Precision PC-based electronic calibration
• Automated voltage trimming or setting
• Remote voltage or current adjustment of
inaccessible nodes
• PCMCIA based instrumentation trimming
• Electrically adjusted resistive load
• Temperature compensated current sources and
current mirrors
• Electrically trimmed/calibrated current sources
• Permanent precision preset voltage level shifter
• Low temperature coefficient voltage and/or current
bias circuits
• Multiple preset voltage bias circuits
• Multiple channel resistor pull-up or pull-down circuits
• Microprocessor based process control systems
• Portable data acquisition systems
• Battery operated terminals and instruments
• Remote telemetry systems
• E-trimmable gain amplifiers
• Low level signal conditioning
• Sensor and transducer bias currents
• Neural networks

FEATURES
• Electrically Programmable Analog Device
• Proven, non-volatile CMOS technology
• Operates from 2V, 3V, 5V to 10V
• Flexible basic circuit building block and design
element
• Very high resolution -- average e-trim voltage
resolution of 0.1mV
• Wide dynamic range -- current levels from 0.1mA
to 3000mA
• Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
• Typical 10-year drift of less than 2mV
• Usable in voltage mode or current mode
• High input impedance -- 1012W
• Very high DC current gain -- greater than 109
• Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68mA
• Tight matching and tracking of on-resistance
between different devices with e-trim
• Very low input currents and leakage currents
• Low cost, monolithic technology
• Application-specific or in-system programming modes
• Opptional user software-controlled automation
• Opptional e-trim of any standard/custom configuration
• Micropower operation
• Available in standard PDIP, SOIC and hermetic CDIP
packages
• Suitable for matched-pair balanced circuit configuration
• Suitable for both coarse and fine trimming, as well as
matched MOSFET array applications
• RoHS compliant