Features
• 600 V system-in-package integrating half-bridge gate driver and high-voltage
GaN power transistors:
– QFN 9 x 9 x 1 mm package
– RDS(ON) = 225 mΩ
– IDS(MAX) = 6.5 A
• Reverse current capability
• Zero reverse recovery loss
• UVLO protection on low-side and high-side
• Internal bootstrap diode
• Interlocking function
• Dedicated pin for shutdown functionality
• Accurate internal timing match
• 3.3 V to 15 V compatible inputs with hysteresis and pull-down
• Overtemperature protection
• Bill of material reduction
• Very compact and simplified layout
• Flexible, easy and fast design.
Application
• Switch-mode power supplies
• Chargers and adapters
• High-voltage PFC, DC-DC and DC-AC converters