| 制造商 | 部件名 | 数据表 | 功能描述 |
 NXP Semiconductors |
BLA1011-200.112
|
83Kb / 13P |
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
Rev. 08-26 October 2005 |
 Infineon Technologies A... |
PTVA101K02EV
|
1Mb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
Rev. 02.1, 2016-04-19 |
 Cree, Inc |
PTVA101K02EV
|
359Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET1000 W, 50 V, 1030 / 1090 MHz
|
 STMicroelectronics |
RF5L051K0CB4
|
1Mb / 12P |
1000 W, 50 V, HF to 500 MHz RF power LDMOS transistor
14-Oct-2021 |
|
RF5L052K0CB4
|
1Mb / 12P |
2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor
15-Oct-2021 |
|
RF5L05950CF2
|
726Kb / 12P |
950 W, 50 V, HF to 500 MHz RF power LDMOS transistor
23-Dec-2021 |
|
RF5L0912750CB4
|
1Mb / 13P |
750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
22-Sep-2021 |
|
STAC1011-500
|
490Kb / 9P |
500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor
26-Sep-2019 |
|
STAC1214-350
|
330Kb / 12P |
350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
04-Aug-2020 |
 WOLFSPEED, INC. |
PTVA101K02EV
|
511Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
Rev. 04, 2023-07-07 |