Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage

General Features
● VDS 60V
● ID 300mA
● RDS(ON)( at VGS=10V) ＜2.5ohm
● RDS(ON)( at VGS=4.5V) ＜3.0ohm
● ESD Protected Up to 2.0KV (HBM)

Application
● Battery operated systems
● Solid-state relays
● Direct logic-level interface：TTL/CMOS