Features
• AEC-Q101 qualified
• SCIS energy of 320 mJ @ TJ = 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor

Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology
optimized for coil driving in the harsh environment of automotive ignition systems.
These devices show very low on-state voltage and very high SCIS energy capability
over a wide operating temperature range. Moreover, ESD-protected logic level gate
input and an integrated gate resistor means no external protection circuitry is
required.

Applications
• Automotive ignition coil driver circuit