Features
• AEC-Q101 qualified
• Fast-recovery body diode
• Lower RDS(on) x area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely dv/dt ruggedness
• Zener-protected
• Excellent switching performance thanks to the extra driving source pin

Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery
diode series. Compared with the previous MDmesh fast generation,
DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.

Applications
• Switching applications