DESCRIPTION
The ILD621/ILQ621 and ILD621GB/ILQ621GB are
multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN silicon phototransistors.
These devices are constructed using double molded
insulation technology. This assembly process offers a
withstand test voltage of 7500 VDC.
The ILD621/ILQ621GB is well suited for CMOS interfacing
given the CTRCEsat of 30 % minimum at IF of 1.0 mA. High
gain linear operation is guaranteed by a minimum CTRCE of
100 % at 5.0 mA. The ILD/Q621 has a guaranteed CTRCE
50 % minimum at 5.0 mA. The transparent ion shield insures
stable DC gain in applications such as power supply
feedback circuits, where constant DC VIO voltages are
present.

FEATURES
• Alternate source to TLP621-2/-4 and
TLP621GB-2/-4
• High collector emitter voltage, BVCEO = 70 V
• Dual and quad packages feature:
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage, 5300 VRMS
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC

AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO