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TPD1009S 数据表 (PDF) - Toshiba Semiconductor

TPD1009S Datasheet PDF - Toshiba Semiconductor
部件名 TPD1009S
下载  TPD1009S 下载
文件大小   353.3 Kbytes
页   10 Pages
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor
功能描述 THOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTERGRATED CIRCUIT

TPD1009S Datasheet (PDF)

Go To PDF Page 下载 数据表
TPD1009S Datasheet PDF - Toshiba Semiconductor

部件名 TPD1009S
下载  TPD1009S Click to download

文件大小   353.3 Kbytes
页   10 Pages
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor
功能描述 THOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTERGRATED CIRCUIT

TPD1009S 数据表 (HTML) - Toshiba Semiconductor


TPD1009S 产品详情

High−side Power Switch for Motors, Solenoids, and Lamp Drivers.

TPD1009S is a monolithic power IC for high−side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self−protection and diagnostic functions.

Features
● A monolithic power IC with a new structure combining a control block (Bi−CMOS) and a vertical power MOS FET (π−MOS) on a single chip.
● One side of load can be grounded to a high−side switch.
● Can directly drive a power load from a microprocessor.
● Built−in protection against thermal shutdown and load short circuiting.
● Incorporates a diagnosis function that allows diagnosis output to be read externally at load short circuiting, opening, or overtemperature.
● Up to −10V of counterelectromotive force from an L load can be applied.
● Low on resistance : RON = 60mΩ (max)
● Low operating current : IDD = 1mA (typ.) (@VDD = 12V, VIN = 0V)
● 5−pin TO−220 insulated package.
● Three standard lead configurations.




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