DESCRIPTION
The TC55417P/J-H is a 65,536 bit high speed static random access memory organized as 16,384 words
by 4 bits using CMOS technology, and operated from a single 5-volt supply.
Toshiba's high
performance device technolgy provides both high speed and low power features with a maximum access
time of 15ns/20ns/25ns/35ns and maximum operating current of 120mA/100mA/100mA / 80mA at
minimum cycle time.
The TC55417P/J-H also features an automatic stand-by mode. When deselected by Chip Enable (CE),
the operating current is reduced to 1mA.
The TC55417P/J-H is suitable for use in cache memory and high speed storage, where high speed/
high density are required.
The TC55417P/J-H is packaged in a 24 pin standard plastic DIP and a 24 pin plastic SOJ.
with 0.3 inch width for high density assembly.
The TC55417P/J-H is fabricated with ion implanted CMOS silicon gate MOS technology for high
performance and high reliability.

FEATURES
Fast access time :
TC55417P/J-15H
15ns(MAX.)
TC55417P/J-20H 20ns(MAX.)
TC55417P/J-25H
25ns(MAX.)
TC55417P/J-35H
35ns(MAX.)
5V single power supply: 5V±10%
Fully static operation
Diractly TTL compatible :
All Input and Output
• Low power dissipation :
Operation TC55417P/J-15H
TC55417P/J-20H
TC55417P/J-25H
TC55417P/J-35H
Standby
Outpot buffer control : OE
• Package
120mA(MAX.)
100mA(MAX.)
100mA(MAX.)
80mA(MAX.)
1mA(MAX.)
TC55417P-H: DIP24-P-300B
TC55417J-H: SOJ24-P-300A