Features
• Maximum junction temperature: TJ = 175 °C
• Excellent switching performance thanks to the extra driving kelvin pin
• Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A
• Minimized tail current
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode

Applications
• Photovoltaic inverters
• High-frequency converters

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents an
optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. A faster switching event can be achieved by
the Kelvin pin, which separates power path from driving signal. Furthermore, the
slightly positive VCE(sat) temperature coefficient and very tight parameter distribution
result in safer paralleling operation.