■Features
・Ideal for drive of IGBT and SiC MOSFET
・Gate voltage : +18V/-2V
・ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit)
・Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise.
・Fast response : about 100nsec(typ)
・The isolation for primary-secondary signal used fast response isolator.
・Input-to-Output dielectric withstand voltage : AC5000V
・Output CH1-to-Ouput CH2 dielectric withstand voltage : AC4000V
・Input-to-Output insulation distance : 14mm (clearance), 16mm(creepage） (As for Gate driver module PCB)
・Output CH1-to-Output CH2 insulation distance : 7mm (clearance), 12mm(creepage）
・DC/DC converter input voltage :13～28V
・Signal input voltage : 3.3V,5V
・Overload protection (DC/DC converter)
・Overheat protection (DC/DC converter)
・Half bridge mode (Gate drive circuit)
・Desaturation protection (Gate drive circuit)
・Soft turn-off function (Gate drive circuit)
・Fault signal output function (Gate drive circuit)
・Miller function (Gate drive circuit)
・Under-voltage lockout(UVLO) (Gate drive circuit)
・Insulating moistureproof coating
・Safety standards：UL508(file no.E243511) (DC/DC converter only)
・Reinforced isolation according to IEC 60664-1 (IEC61800-5-1, IEC62477-1, IEC62109-1, etc.)
・UL compliant (UL1741, UL508, etc.)

■Application
Industrial inverter, power conditioner, etc …