NMSD200B01 数据表(PDF) - Diodes Incorporated

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NMSD200B01 数据表 (PDF) - Diodes Incorporated

NMSD200B01 Datasheet PDF - Diodes Incorporated


部件名	NMSD200B01

下载	NMSD200B01 下载

文件大小	177.65 Kbytes

页	8 Pages

制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

标志

功能描述	200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE

NMSD200B01 Datasheet (PDF)

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NMSD200B01 Datasheet PDF - Diodes Incorporated


部件名	NMSD200B01

下载	NMSD200B01 Click to download

文件大小	177.65 Kbytes

页	8 Pages

制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

标志

功能描述	200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE

NMSD200B01 数据表 (HTML) - Diodes Incorporated

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NMSD200B01 产品详情

General Description
• NMSD200B01 is best suited for switching voltage regulator and power management applications. It improves efficiency and reliability of DC-DC controllers used in Voltage Regulator Modules (VRM) and can support continuous maximum current of 200mA. It features an ESD protected discrete N-MOSFET with low on-resistance and a discrete Schottky diode with low forward drop. It reduces component count, consumes less space and minimizes parasitic losses. The component devices can be used as a part of a circuit or as a stand alone discrete device.

Features
• N-MOSFET with ESD Gate Protection
• N-MOSFET with Low On-Resistance (RDS(ON))
• Low Vf Schottky Diode
• Low Static, Switching and Conduction Losses
• Good Dynamic Performance
• Surface Mount Package Suited for Automated Assembly
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)

类似零件编号 - NMSD200B01

制造商	部件名	数据表	功能描述
C&D Technologies	NMS	109Kb / 2P	6kVDC Isolated 2W Dual Output DC-DC Converters
Murata Power Solutions ...	NMS	129Kb / 4P	6kVDC Isolated 2W Dual Output DC-DC Converters 2023
Richco, Inc.	NMS-306	37Kb / 1P	NYLON METRIC SCREWS
	NMS-308	37Kb / 1P	NYLON METRIC SCREWS
	NMS-310	37Kb / 1P	NYLON METRIC SCREWS

类似说明 - NMSD200B01

制造商	部件名	数据表	功能描述
Diodes Incorporated	LMN200B01	570Kb / 10P	200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR DS30651 Rev. 7 - 2
	LMN200B02	522Kb / 10P	200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR DS30658 Rev. 4 - 2
	LMN200B02	251Kb / 10P	200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET DS30658 Rev. 7 - 2
Micro Commercial Compon...	RB520S-40	182Kb / 2P	200 mA Schottky Barrier Diode 40 Volts
Cystech Electonics Corp...	MTB1K6N06KS6R	308Kb / 10P	200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode
Micro Commercial Compon...	RB520S-40	313Kb / 3P	200 mA Schottky Barrier Diode 40 Volts
Microsemi Corporation	1N6675UR-1	417Kb / 6P	200 and 500 mA Schottky Barrier Rectifier
Nexperia B.V. All right...	BAT721	191Kb / 8P	40 V, 200 mA Schottky barrier diode 1 October 2022
	BAT721-Q	191Kb / 8P	40 V, 200 mA Schottky barrier diode 3 May 2023
	RB521S30-Q	229Kb / 11P	200 mA low VF Schottky barrier rectifier 20 April 2023

关于 Diodes Incorporated

Diodes Incorporated是一家公开交易的公司，设计，制造和提供各种离散，模拟和混合信号半导体以及完整的电力解决方案。
该公司成立于1964年，总部位于德克萨斯州普莱诺。
它在北美，欧洲和亚洲的销售，支持和设计中心在全球范围内运作。
Diodes Incorporated为各种行业提供服务，包括汽车，通信，计算，消费者和工业。
该公司提供各种产品，包括二极管，整流器，晶体管，电压调节器，MOSFET，LED驱动器和保护设备等。
该公司的使命是为客户提供高质量，高可靠性产品和出色的客户服务。
侧重于创新和客户满意度，Diodes Incorporated致力于成为电力管理解决方案的领先提供商。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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