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UPD4164 数据表 (PDF) - NEC

UPD4164 Datasheet PDF - NEC
部件名 UPD4164
下载  UPD4164 下载
文件大小   363.29 Kbytes
页   6 Pages
制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC
功能描述 65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY

UPD4164 Datasheet (PDF)

Go To PDF Page 下载 数据表
UPD4164 Datasheet PDF - NEC

部件名 UPD4164
下载  UPD4164 Click to download

文件大小   363.29 Kbytes
页   6 Pages
制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC
功能描述 65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY

UPD4164 数据表 (HTML) - NEC


UPD4164 产品详情

DESCRIPTION
The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed
to operate from a single +5V power supply. The negative-voltage substrate bias is
internally generated - its operation is both automatic and transparent.
The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides
high storage cell density, high performance and high reliability.
The /lPD4164 uses a single transistor dynamic storage cell and advanced dynamic
circuitry throughout, including the 512 sense amplifiers, which assures that power
dissipation is minimized. Refresh characteristics have been chosen to maximize yield
(low cost to user) while maintaining compatibility between Dynamic RAM generations.
The /lPD4164 three-state output is controlled by CAS, independent of RAS. After a
valid read or read-modify-write cycle, data is held on the output by holding CAS low.
The data out pin is returned to the high impedance state by returning CAS to a high
state. The /lPD4164 hidden refresh feature allows CAS to be held low to maintain
output data while RAS is used to execute RAS only refresh cycles.
Refreshing is accomplished by performing RA"S" only refresh cycles, hidden refresh
cycles, or normal read or write cycles on the 128 address combinations of AO through
A6 during a 2 ms period.
Multiplexed address inputs permit the /lPD4164 to be packaged in the standard 16
pin dual-in-line package. The 16 pin package provides the highest system bit densities
and is compatible with widely available automated handling equipment.

FEATURES
• High Memory Density
• MUltiplexed Address Inputs
• Single +5V Supply
• On Chip Substrate Bias Generator
• Access Time: /lPD4164-1 - 250 ns
/lPD4164-2 - 200 ns
/lPD4164-3 - 150 ns
• Read, Write Cycle Time: /lPD4164-1 - 410 ns
/lPD4164-2 - 335 ns
/lPD4164-3 - 270 ns
• Low Power Dissipation: 250 mW (Active); 28 mW (Standby)
• Non-Latched Output is Three-State, TTL Compatible
• Read, Write, Read-Write; Read-Modify-Write, RAS Only Refresh, and Page Mode
Capability
• All Inputs TTL Compatible, and Low Input Capacitance
• 128 Refresh Cycles (AO-A6 Pins for Refresh Address)
• CAS Controlled Output Allows Hidden Refresh
• Available in Both Ceramic and Plastic 16 Pin Packages




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关于 NEC


NEC Corporation是一家日本跨国信息技术和电子公司。该公司成立于1899年,总部位于日本东京。 NEC提供广泛的产品和服务,包括信息技术,电信和电子产品。它的投资组合包括计算机硬件,软件和服务,网络解决方案,显示解决方案以及企业服务器和存储解决方案。

NEC以其在信息技术领域的专业知识及其提供创新和高质量产品和服务的能力而闻名。该公司在世界各地拥有运营和设施,并在亚太地区拥有强大的业务。 NEC与客户紧密合作,提供满足其特定要求和需求的自定义解决方案。

除了其核心业务外,NEC还活跃于研发领域,并参与了与高级技术有关的各种项目,例如人工智能,5G网络和物联网(IoT)。 NEC致力于提供可持续的解决方案,以支持社会发展并改善世界各地人们的生活质量。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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