Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a six-wire, 4-bit I/O interface that
allows for low-power, high-performance operation in a
low pin-count package. SST26VF016BEUI also supports
full command-set compatibility to traditional Serial
Peripheral Interface (SPI) protocol. System designs
using SQI flash devices occupy less board space and
ultimately lower system costs.
All members of the 26 Series, SQI family are manufactured
with proprietary, high-performance CMOS Super-
Flash® technology. The split-gate cell design and thickoxide
tunneling injector attain better reliability and manufacturability
compared with alternate approaches.
SST26VF016BEUI significantly improves performance
and reliability, while lowering power consumption.
These devices write (Program or Erase) with a single
power supply of 2.3-3.6V. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the
SuperFlash technology uses less current to program
and has a shorter erase time, the total energy consumed
during any Erase or Program operation is less
than alternative flash memory technologies.
SST26VF016BEUI is offered in 8-lead SOIC (3.90
mm). See Figure 2-1 for pin assignments.

Features
• Factory-Programmed with EUI-48 and EUI-64
Globally Unique Identifier
- Secure, read-only access in Serial Flash
Discoverable Parameter (SFDP) table
• Single Voltage Read and Write Operations
- 2.7-3.6V or 2.3-3.6V
• Serial Interface Architecture
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- Mode 0 and Mode 3
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High Speed Clock Frequency
- 2.7-3.6V: 104 MHz max
- 2.3-3.6V: 80 MHz max
• Burst Modes
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby Current: 15 μA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter overlay
blocks
- One 32 KByte top and bottom overlay blocks
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection
- Individual-Block Write Protection with permanent
lock-down capability
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
• Security ID
- One-Time Programmable (OTP) 2 KByte,
Secure ID
- 64 bit unique, factory pre-programmed
identifier
- User-programmable area
• Temperature Range
- Industrial: -40°C to +85°C
• Automotive AECQ-100 Qualified
• Packages Available
- 8-lead SOIC (3.90 mm)
• All devices are RoHS compliant