Description The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. • RoHS compliant containing no lead or bromide • Low Profile (<0.6 mm) • Dual Sided Cooling Compatible • Ultra Low Package Inductance • Optimized for High Frequency Switching • Ideal for CPU Core DC-DC Converters • Optimized for Control FET applications • Low Conduction and Switching Losses • Compatible with existing Surface Mount Techniques
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