GENERAL DESCRIPTION
The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process. The HX2000 arrays are for 5V designs only. The HX2000r arrays support 5V and 3.3V operation. High density is achieved with the standard 3-layer metal or optional 4-layer metal process, providing up to 290,000 usable gates.

FEATURES
• Fabricated on Honeywell’s Radiation Hardened
    – 0.65 µmLeff RICMOS™ IV SOI Process, HX2000
    – 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r
• Array Sizes from 40K to 390K Available Gates (Raw)
• HX2000 Supports 5V Core Operation
• HX2000r Supports 3.3V Core Operation
• HX2000r Supports Mixed Voltage I/O Buffers
• TTL (5V) or CMOS (5V/3.3V) Compatible I/O
• Configurable Multi-Port Gate Array SRAM
• Single or Dual Port Custom SRAM Drop-In Capability
• Supports Chip Level Power Down for Cold Sparing
• Supports System Speeds Beyond 100 MHz
• Total Dose Hardness ≥1x106 rad(SiO2)
• Dose Rate Upset Hardness:
    ≥1x1010 rad(Si)/sec, HX2000*
    ≥1x109 rad(Si)/sec, HX2000r*

    Option Available for:
    ≥1x1011 rad(Si)/sec, HX2000*
    ≥1x1010 rad(Si)/sec, HX2000r*
• Dose Rate Survivability ≥1x1012 rad(Si)/sec*
• Soft Error Rate
    ≤1x10-11 Errors/Bit/Day, HX2000
    ≤1x10-10 Errors/Bit/Day, HX2000r
• Neutron Fluence Hardness to 1x1014/cm2
• No Latchup