DESCRIPTION
The K814P, K824P, K844P consist of a phototransistor
optically coupled to 2 gallium arsenide infrared emitting
diodes (reverse polarity) in 4 pin (single); 8 pin (dual) or
16-pin (quad) plastic dual inline package.
The elements are mounted on one leadframe providing a
fixed distance between input and output for highest safety
requirements

FEATURES
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage VISO = 5000 VRMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) of typical 100 %
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC