DESCRIPTION
The 110 °C rated SFH617A (DIP) feature a high current
transfer ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared diode emitter,
which is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6.

FEATURES
• Operating temperature from -55 °C to +110 °C
• Good CTR linearity depending on forward current
• Isolation test voltage, 5300 VRMS
• High collector emitter voltage, VCEO = 70 V
• Low saturation voltage
• Fast switching times
• Low CTR degradation
• Temperature stable
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912