Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.

Features
 6 µs of short-circuit withstand time
 VCE(sat) = 1.55 V (typ.) @ IC = 10 A
 Tight parameter distribution
 Safer paralleling
 Positive VCE(sat) temperature coefficient
 Low thermal resistance
 Soft and very fast recovery antiparallel diode
 Maximum junction temperature: TJ = 175 °C

Applications
 Motor control
 UPS
 PFC
 General purpose inverter