Description
These devices are very fast IGBT developed
using advanced PowerMESH™ technology. This
process guarantees an excellent trade-off
between switching performance and low on-state
behavior. These devices are well-suited for
resonant or soft-switching applications.

Features
■ Low on-voltage drop (VCE(sat))
■ Off losses include tail current
■ Losses include diode recovery energy
■ High frequency operation up to 70 kHz
■ Very soft ultra fast recovery anti parallel diode

Applications
■ High frequency inverters
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers