| 制造商 | 部件名 | 数据表 | 功能描述 |
 NEC |
2SA1988
|
47Kb / 4P |
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE
|
|
2SC1927
|
36Kb / 4P |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE
|
 KEC(Korea Electronics) |
KTD1028V
|
363Kb / 2P |
EPITAXIAL PLANAR NPN TRANSISTOR (INDUSTRIAL USE HIGH CURRENT)
|
 NEC |
2SC3218-M
|
121Kb / 3P |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE
|
 New Jersey Semi-Conduct... |
2N2919
|
133Kb / 1P |
DIFFERENTIAL AMPLIFIER AND DUAL NPN SILICON TRANSISTOR
|
 Isahaya Electronics Cor... |
RT3C66M
|
150Kb / 5P |
Dual Transistor For Differential Amplify Application Silicon Npn Epitaxial Type
|
 Renesas Technology Corp |
2SC2586
|
160Kb / 6P |
NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE
July 1996 |
|
2SC2762
|
191Kb / 6P |
NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE
July 1996 P |
|
2SC3218-M
|
175Kb / 10P |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE
July 1996 P |
|
2SC3286-M
|
176Kb / 10P |
NPN SILICON EPITAXIAL TRANSISTOR FOR 230-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE
July 1996 P |