SUMMARY DESCRIPTION
The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming. The VPP pin can also be used as a control pin to provide absolute protection against program or erase.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDD = 1.7V to 2V for Program, Erase and Read
    – VDDQ = 1.7V to 2.24V for I/O Buffers
    – VPP = 12V for fast Program (optional)
■ SYNCHRONOUS / ASYNCHRONOUS READ
    – Synchronous Burst Read mode: 66MHz
    – Asynchronous/ Synchronous Page Read mode
    – Random Access: 60ns, 70ns, 80ns
■ SYNCHRONOUS BURST READ SUSPEND
■ PROGRAMMING TIME
    – 8µs by Word typical for Fast Factory Program
    – Double/Quadruple Word Program option
    – Enhanced Factory Program options
■ MEMORY BLOCKS
    – Multiple Bank Memory Array: 4 Mbit Banks
    – Parameter Blocks (Top or Bottom location)
■ DUAL OPERATIONS
    – Program Erase in one Bank while Read in others
    – No delay between Read and Write operations
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WP for Block Lock-Down
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device number
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Codes: M58WR064FT (Top): 8810h M58WR064FB (Bottom): 8811h
■ PACKAGE
    – Compliant with Lead-Free Soldering Processes
    – Lead-Free Versions