RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs

Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common− source amplifier applications in 26 volt base station equipment.

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
   Output Power @ P1db: 75 Watts
   Power Gain @ P1db: 18.5 dB
   Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
   Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
   40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.