PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING

The 2SA1743 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = −2 V, IC = −2 A)
V CE(sat) ≤ 0.3 V (IC = −6 A, IB = −0.3 A)
• Full-mold package that does not require an insulating board or
bushing
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.