AUDIO FREQUENCY AMPLIFIER, SWITCHING
PNP SILICON EPITAXIAL TRANSISTORS

FEATURES
· Low VCE(sat)
VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA)
· High DC Current Gain
hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage VCB0 -30 V
Collector to Emitter Volteage VCE0 -30 V
Emitter to Base Voltage VEB0 -6.0 V
Collector Current (DC) IC(DC) -5.0 A
Collector Current (Pulse)* IC(Pulse) -8.0 A
Base Current (DC) IB(DC) -1.0 A
* PW £ 10ms, Duty Cycle £ 10 %
Maximum Power Dissipation
Total Power Dissipation (TC = 25 °C) PT 10 W
Total Power Dissipation (TA = 25 °C) PT 1.0 W
Maximum Temperature
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 to 150 °C