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DDR4-1600 数据表 (PDF) - List of Unclassifed Manufacturers

DDR4-1600 Datasheet PDF - List of Unclassifed Manufacturers
部件名 DDR4-1600
下载  DDR4-1600 下载
文件大小   716.05 Kbytes
  48 Pages
制造商  ETC2 [List of Unclassifed Manufacturers]
网页  
标志 ETC2 - List of Unclassifed Manufacturers
功能描述 Lead-Free&Halogen-Free

DDR4-1600 Datasheet (PDF)

Go To PDF Page 下载 数据表
DDR4-1600 Datasheet PDF - List of Unclassifed Manufacturers

部件名 DDR4-1600
下载  DDR4-1600 Click to download

文件大小   716.05 Kbytes
  48 Pages
制造商  ETC2 [List of Unclassifed Manufacturers]
网页  
标志 ETC2 - List of Unclassifed Manufacturers
功能描述 Lead-Free&Halogen-Free

DDR4-1600 数据表 (HTML) - List of Unclassifed Manufacturers


DDR4-1600 产品详情

FEATURES
• VDD=VDDQ=1.2V +/- 0.06V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data, data
strobes and data masks latched on the rising edges of
the clock
• Programmable CAS latency 9, 11, 12, 13, 14, 15, 16,
17, 18, 19 and 20
• Programmable additive latency 0, CL-1, and CL-2
supported (x4/x8 only)
• Programmable CAS Write latency (CWL) = 9, 10, 11,
12, 14, 16, 18
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 16banks
• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
- 7.8 μs at 0oC ~ 85 oC
- 3.9 μs at 85oC ~ 95 oC
• Operating Temperture Range
- Commercial Temperature (0 oC~ 95 oC)
- Industrial Temperature (-40oC~ 95 oC)
• JEDEC standard 78ball FBGA(x4/x8), 96ball FBGA(x16)
• Driver strength selected by MRS
• Dynamic On Die Termination supported
• Two Termination States such as RTT_PARK and
RTT_NOM switchable by ODT pin
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
• This product in compliance with the RoHS directive.
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• Maximum Power Saving Mode is supported
• TCAR(Temperature Controlled Auto Refresh) mode is
supported
• LP ASR(Low Power Auto Self Refresh) mode is supported
• Fine Granularity Refresh is supported
• Per DRAM Addressability is supported
• Geardown Mode(1/2 rate, 1/4 rate) is supported
• Programable Preamble for read and write is supported
• Self Refresh Abort is supported
• CA parity (Command/Address Parity) mode is supported
• Bank Grouping is applied, and CAS to CAS latency
(tCCD_L, tCCD_S) for the banks in the same or different
bank group accesses are available
• DBI(Data Bus Inversion) is supported(x8/x16)




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