NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING

The 2SC4553 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
low power dissipation. In addition, a high hFE enables alleviation of
the driver load.

FEATURES
• High hFE and low VCE(sat):
hFE ≅ 800 (VCE = 2 V, IC = 3 A)
VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or
insulation bushing