PDTC143EM 数据表(PDF) - Nexperia B.V. All rights reserved

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PDTC143EM 数据表 (PDF) - Nexperia B.V. All rights reserved

PDTC143EM Datasheet PDF - Nexperia B.V. All rights reserved


部件名	PDTC143EM

下载	PDTC143EM 下载

文件大小	817.71 Kbytes

页	12 Pages

制造商	NEXPERIA [Nexperia B.V. All rights reserved]

网页	https://www.nexperia.com/

标志

功能描述	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

PDTC143EM Datasheet (PDF)

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PDTC143EM Datasheet PDF - Nexperia B.V. All rights reserved


部件名	PDTC143EM

下载	PDTC143EM Click to download

文件大小	817.71 Kbytes

页	12 Pages

制造商	NEXPERIA [Nexperia B.V. All rights reserved]

网页	https://www.nexperia.com/

标志

功能描述	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

PDTC143EM 数据表 (HTML) - Nexperia B.V. All rights reserved

PDTC143EM Datasheet HTML 1Page - Nexperia B.V. All rights reserved

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PDTC143EM Datasheet HTML 10Page - Nexperia B.V. All rights reserved

PDTC143EM 产品详情

1. General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-
Mounted Device (SMD) plastic package.
PNP complement: PDTA143EM

2. Features and benefits
• 100 mA output current capability
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs
• AEC-Q101 qualified

3. Applications
• Digital application in automotive and industrial segments
• Cost-saving alternative for BC847 series in digital applications
• Controlling IC inputs
• Switching loads

类似零件编号 - PDTC143EM

制造商	部件名	数据表	功能描述
NXP Semiconductors	PDTC143EM	188Kb / 14P	NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓 2004 Aug 05
Nexperia B.V. All right...	PDTC143EM	1Mb / 17P	PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k Rev. 8 - 8 December 2011
	PDTC143EM	1Mb / 18P	NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k Rev. 10 - 8 December 2011
	PDTC143EMB	960Kb / 12P	NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

类似说明 - PDTC143EM

制造商	部件名	数据表	功能描述
Nexperia B.V. All right...	PDTC143ZU-Q	227Kb / 11P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 22 February 2023
	PUMD15-Q	254Kb / 13P	50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 8 March 2023
	PUMH18	237Kb / 11P	50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ 31 March 2023
	PDTC143ET-Q	228Kb / 12P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 7 March 2022
	PDTC143ET	809Kb / 12P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 1 April 2023
	PDTC143EU-Q	226Kb / 12P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 7 March 2022
	PDTC143EU	772Kb / 11P	50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 1 April 2023
	PUMH15-Q	236Kb / 11P	NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 11 May 2022
	PDTD143ET-Q	247Kb / 13P	500 mA, 50 V NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 5 January 2022
	PEMH13	223Kb / 11P	50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 29 December 2022

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