Features
• Single 1.65 V – 1.95 V supply
• Serial Peripheral Interface (SPI) compatible
• Supports SPI Modes 0 and 3
• Supports RapidS™ operation
• Supports Dual-Input Program and Dual-Output Read
• Very high operating frequencies
• 100 MHz for RapidS
• 85 MHz for SPI
• Clock-to-output time (tV) of 5 ns maximum
• Flexible, optimized erase architecture for code + data storage applications
• Uniform 4-kB, 32-kB, and 64-kB Block Erase
• Full-Chip Erase
• Individual sector protection with Global Protect/Unprotect feature
• 32 sectors of 64 kB each
• Hardware controlled locking of protected sectors via WP pin
• Sector Lock-down with permanent freeze option
• Make any combination of 64KB sectors permanently read-only
• 128-byte, One-Time Programmable (OTP) Security Register
• 64 bytes factory preprogrammed, 64 bytes user programmable
• Flexible programming
• Byte/Page Program (1 to 256 bytes)
• Fast program and erase times
• 1.0 ms typical Page Program (256 bytes) time
• 50 ms typical 4-kB Block Erase time
• 250 ms typical 32-kB Block Erase time
• 550 ms typical 64-kB Block Erase time
• Program and Erase Suspend/Resume
• Automatic checking and reporting of erase/program failures
• Software controlled reset
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low power dissipation
• 10 mA Active Read current (typical at 20 MHz)
• 8 µA Deep Power-Down current (typical)
• Endurance:
• 100,000 program/erase cycles (-40 °C to +85 °C)
• 20,000 program/erase cycles (-40 °C to +105 °C)
• Data retention: 20 years
• Complies with full industrial temperature range
• Industry standard green (Pb/halide-free/RoHS-compliant) package options
• 8-lead SOIC (0.150" wide)
• 8-pad Ultra-thin DFN (5 x 6 x 0.6 mm)

Description
The AT25DL161 is a serial interface Flash memory device designed for use in a wide variety of high-volume,
consumer-based applications in which program code is shadowed from Flash memory into embedded or external
RAM for execution. The flexible erase architecture of the AT25DL161, with its erase granularity as small as 4 kB,
makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.
The physical sectoring and the erase block sizes of the AT25DL161 have been optimized to meet the needs of
today's code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the
memory space can be used much more efficiently. Because certain code modules and data storage segments
must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with
large sectored and large Block Erase Flash memory devices can be greatly reduced. This increased memory
space efficiency allows additional code routines and data storage segments to be added, while still maintaining
the same overall device density.
The AT25DL161 also offers a sophisticated method for protecting individual sectors against erroneous or
malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a
system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory
array securely protected. This is useful in applications where program code is patched, updated on a subroutine
or module basis, or in applications where data storage segments need to be modified without running the risk of
errant modifications to the program code segments. In addition to individual sector protection capabilities, the
AT25DL161 incorporates Global Protect and Global Unprotect features that allow the entire memory array to be
either protected or unprotected all at once. This reduces overhead during the manufacturing process because
sectors do not have to be unprotected one by one prior to initial programming.
To take code and data protection to the next level, the AT25DL161 incorporates a sector lockdown mechanism
that allows any combination of individual 64 kB sectors to be locked down and become permanently read-only.
This addresses the need of certain secure applications that require portions of the Flash memory array to be
permanently protected against malicious attempts at altering program code, data modules, security information or
encryption/decryption algorithms, keys, and routines. The device also contains a specialized, OTP (One-Time
Programmable) security register, which can be used for unique device serialization, system-level Electronic Serial
Number (ESN) storage, locked key storage, or other purposes.
Specifically designed for use in 1.8 V systems, the AT25DL161 supports read, program, and erase operations with
a supply voltage range of 1.65 V to 1.95 V. No separate voltage is required for programming and erasing.