Features
 All bridges can be controlled independently.
An ultra-fine CMOS process has been adopted for low power
consumption in a design with no charge-pump.
 Built-in H bridge of a full-swing drive 4 circuit
 Built-in low-voltage malfunction prevention circuit
 Power supply systems are all internally isolated and include
a function to prevent reverse current between power supplies.
 It is housed in a small package (24SSOP 6.5x6.4 mm t=1.0mm)