PDTD113E 数据表(PDF) - Nexperia B.V. All rights reserved

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PDTD113E 数据表 (PDF) - Nexperia B.V. All rights reserved

PDTD113E Datasheet PDF - Nexperia B.V. All rights reserved


部件名	PDTD113E

下载	PDTD113E 下载

文件大小	245.79 Kbytes

页	11 Pages

制造商	NEXPERIA [Nexperia B.V. All rights reserved]

网页	https://www.nexperia.com/

标志

功能描述	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

PDTD113E Datasheet (PDF)

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PDTD113E Datasheet PDF - Nexperia B.V. All rights reserved


部件名	PDTD113E

下载	PDTD113E Click to download

文件大小	245.79 Kbytes

页	11 Pages

制造商	NEXPERIA [Nexperia B.V. All rights reserved]

网页	https://www.nexperia.com/

标志

功能描述	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

PDTD113E 数据表 (HTML) - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 1Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 2Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 3Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 4Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 5Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 6Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 7Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 8Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 9Page - Nexperia B.V. All rights reserved

PDTD113E Datasheet HTML 10Page - Nexperia B.V. All rights reserved

PDTD113E 产品详情

Features
* Built-in bias resistors
* Simplifies circuit design
* 500 mA output current capability
* Reduces component count
* Reduces pick and place costs
* ±10 % resistor ratio tolerance

类似零件编号 - PDTD113E

制造商	部件名	数据表	功能描述
NXP Semiconductors	PDTD113E	67Kb / 10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm Rev. 01-14 April 2005
	PDTD113E	131Kb / 10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓 v
	PDTD113EK	948Kb / 12P	Low VCEsat (BISS) transistors May 2006
	PDTD113EK	67Kb / 10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm Rev. 01-14 April 2005
	PDTD113EK	131Kb / 10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓 v

类似说明 - PDTD113E

制造商	部件名	数据表	功能描述
Nexperia B.V. All right...	PDTD113ZT-Q	201Kb / 8P	NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ 6 April 2022
	PDTD123YT-Q	221Kb / 11P	50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ 22 July 2022
	PDTB113ET	239Kb / 11P	PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 3 - 14 September 2010
	PDTB113ZT	206Kb / 8P	PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ 15 January 2021
	PDTB123YT-Q	222Kb / 10P	PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ 25 February 2022
	PDTD113ZT	897Kb / 8P	50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ 1 January 2023
	PDTD123E_SER	245Kb / 11P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 02 - 16 November 2009
	PDTD123T_SER	243Kb / 11P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 03 - 16 November 2009
	PDTD123Y_SER	246Kb / 11P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 02 - 16 November 2009
	PDTD143ET-Q	247Kb / 13P	500 mA, 50 V NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ 5 January 2022

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