NVMFWS1D3N04XM 数据表(PDF) - ON Semiconductor

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NVMFWS1D3N04XM 数据表 (PDF) - ON Semiconductor

NVMFWS1D3N04XM Datasheet PDF - ON Semiconductor


部件名	NVMFWS1D3N04XM

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文件大小	148.22 Kbytes

页	7 Pages

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

功能描述	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

NVMFWS1D3N04XM Datasheet (PDF)

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NVMFWS1D3N04XM Datasheet PDF - ON Semiconductor


部件名	NVMFWS1D3N04XM

下载	NVMFWS1D3N04XM Click to download

文件大小	148.22 Kbytes

页	7 Pages

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

功能描述	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

NVMFWS1D3N04XM 数据表 (HTML) - ON Semiconductor

NVMFWS1D3N04XM Datasheet HTML 1Page - ON Semiconductor

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NVMFWS1D3N04XM Datasheet HTML 3Page - ON Semiconductor

NVMFWS1D3N04XM Datasheet HTML 4Page - ON Semiconductor

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NVMFWS1D3N04XM Datasheet HTML 6Page - ON Semiconductor

NVMFWS1D3N04XM Datasheet HTML 7Page - ON Semiconductor

NVMFWS1D3N04XM 产品详情

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5 x 6 mm) with Compact Design
• AECQ101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification

类似零件编号 - NVMFWS1D3N04XM

制造商	部件名	数据表	功能描述
ON Semiconductor	NVMFWS1D1N04XM	149Kb / 7P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A April, 2023 - Rev. 3
	NVMFWS1D1N04XMT1G	149Kb / 7P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A April, 2023 - Rev. 3
	NVMFWS1D5N08X	164Kb / 7P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A April, 2023 - Rev. 0
	NVMFWS1D5N08XT1G	164Kb / 7P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A April, 2023 - Rev. 0
	NVMFWS1D9N08	168Kb / 7P	MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A October, 2023 - Rev. 1

类似说明 - NVMFWS1D3N04XM

制造商	部件名	数据表	功能描述
ON Semiconductor	NVMFWS2D9N04XM	149Kb / 7P	MOSFET – Power, Single N-Channel, STD Gate, SO8FL 40 V, 3.1 m, 94 A April, 2023 - Rev. 2
	NVMFWS1D1N04XM	149Kb / 7P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A April, 2023 - Rev. 3
	NVMFWS2D3N04XM	146Kb / 7P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 2.35 m, 121 A April, 2023 - Rev. 1
	NVMFWS1D5N08X	164Kb / 7P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A April, 2023 - Rev. 0
	NTMFS1D1N04XM	131Kb / 6P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A June, 2023 - Rev. 0
	NTMFS1D3N04XM	131Kb / 6P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A June, 2023 - Rev. 0
	NTMFS2D5N08X	146Kb / 6P	MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A October, 2023 - Rev. 0
	NVMFWS004N04XM	143Kb / 7P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 4.7 m, 66 A November, 2023 - Rev. 1
	NTMFS3D0N08X	149Kb / 6P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.6 m, 154 A November, 2023 - Rev. 0
	NTMFS4D0N08X	231Kb / 8P	MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A December, 2023 - Rev. 0

关于 ON Semiconductor

“安森美半导体家公开交易的公司，该公司设计，开发和生产各种半导体产品，用于各种应用，包括汽车，计算，消费品，工业和通信市场。
该公司成立于1999年，总部位于亚利桑那州凤凰城。
在半导体上，提供了广泛的电力管理，模拟和离散半导体的组合，包括电源MOSFET，二极管，整流器，电压调节器等。
该公司的产品旨在具有节能，可靠和成本效益，并用于多种应用，包括便携式电子产品，工业自动化系统，可再生能源系统和汽车电子产品。
在半导体上，致力于创新和客户满意度，并致力于提供最佳的半导体解决方案，以满足客户的需求。”

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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